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/lp/springer_journal/the-piezoresistance-of-a-device-with-polyphenylenevinylene-derivative-7VtcsZOVhZ
- Publisher
- Springer Journals
- Copyright
- Copyright © 2018 by Springer-Verlag GmbH Germany, part of Springer Nature
- Subject
- Engineering; Electronics and Microelectronics, Instrumentation; Nanotechnology; Mechanical Engineering
- ISSN
- 0946-7076
- eISSN
- 1432-1858
- D.O.I.
- 10.1007/s00542-018-3973-4
- Publisher site
- See Article on Publisher Site
Abstract
The mechanical and electrical characteristics of poly[1-methoxy-4-(3-propyloxy-heptaisobutyl-PSS)-2,5-phenylenevinylene] (PSS-PPV) film were studied in this work. The loading curves and Young’s modulus of PSS-PPV film were measured with nanoindentation tests. The device ITO/PSS-PPV (75 nm)/Al (100 nm) was fabricated and measured to obtain the current–voltage (I–V) and current-time (I–T) curves under different pressures ranging in 0–163 kPa. The device demonstrated high sensitivity, good stability, and nice repeatability. The piezoresistance coefficient can even reach 2.0 × 10−3 Pa−1 at 0.2 V and 111 kPa. The time and charges required to form a stable build-in electric field in the device under different pressures were analyzed using a high-frequency square-wave voltage. It is deduced that the applied pressure not only tightens the PSS-PPV film but also improves its conductance. This property makes PSS-PPV film possess prospect in pressure sensing applications, though it still suffers from partly slow recovering after considerable compression.
Journal
Microsystem Technologies – Springer Journals
Published: May 29, 2018
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