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The piezoresistance of a device with polyphenylenevinylene derivative PSS-PPV film

The piezoresistance of a device with polyphenylenevinylene derivative PSS-PPV film The mechanical and electrical characteristics of poly[1-methoxy-4-(3-propyloxy-heptaisobutyl-PSS)-2,5-phenylenevinylene] (PSS-PPV) film were studied in this work. The loading curves and Young’s modulus of PSS-PPV film were measured with nanoindentation tests. The device ITO/PSS-PPV (75 nm)/Al (100 nm) was fabricated and measured to obtain the current–voltage (I–V) and current-time (I–T) curves under different pressures ranging in 0–163 kPa. The device demonstrated high sensitivity, good stability, and nice repeatability. The piezoresistance coefficient can even reach 2.0 × 10−3 Pa−1 at 0.2 V and 111 kPa. The time and charges required to form a stable build-in electric field in the device under different pressures were analyzed using a high-frequency square-wave voltage. It is deduced that the applied pressure not only tightens the PSS-PPV film but also improves its conductance. This property makes PSS-PPV film possess prospect in pressure sensing applications, though it still suffers from partly slow recovering after considerable compression. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Microsystem Technologies Springer Journals

The piezoresistance of a device with polyphenylenevinylene derivative PSS-PPV film

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Publisher
Springer Journals
Copyright
Copyright © 2018 by Springer-Verlag GmbH Germany, part of Springer Nature
Subject
Engineering; Electronics and Microelectronics, Instrumentation; Nanotechnology; Mechanical Engineering
ISSN
0946-7076
eISSN
1432-1858
DOI
10.1007/s00542-018-3973-4
Publisher site
See Article on Publisher Site

Abstract

The mechanical and electrical characteristics of poly[1-methoxy-4-(3-propyloxy-heptaisobutyl-PSS)-2,5-phenylenevinylene] (PSS-PPV) film were studied in this work. The loading curves and Young’s modulus of PSS-PPV film were measured with nanoindentation tests. The device ITO/PSS-PPV (75 nm)/Al (100 nm) was fabricated and measured to obtain the current–voltage (I–V) and current-time (I–T) curves under different pressures ranging in 0–163 kPa. The device demonstrated high sensitivity, good stability, and nice repeatability. The piezoresistance coefficient can even reach 2.0 × 10−3 Pa−1 at 0.2 V and 111 kPa. The time and charges required to form a stable build-in electric field in the device under different pressures were analyzed using a high-frequency square-wave voltage. It is deduced that the applied pressure not only tightens the PSS-PPV film but also improves its conductance. This property makes PSS-PPV film possess prospect in pressure sensing applications, though it still suffers from partly slow recovering after considerable compression.

Journal

Microsystem TechnologiesSpringer Journals

Published: May 29, 2018

References