The investigation into charge degradation of MIS structures under strong electric field by a method of controlled current load

The investigation into charge degradation of MIS structures under strong electric field by a... A new method for studying charge degradation of MIS structures by applying a controlled current load to the structure and taking the time dependence of the voltage is suggested. It allows designers (without switching the structure) to monitor changes in the charge state of MIS structures under the conditions when the capacitance is charged and the charge is injected into the insulator. Charge degradation of metal-PSG-passivated thermal silicon dioxide-insulator structures was studied. It was found that both the SiO2 space charge and the density of fast surface states generated by tunnel electron injection from the SiO2 electrode decrease once current load has disappeared. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

The investigation into charge degradation of MIS structures under strong electric field by a method of controlled current load

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Publisher
Springer Journals
Copyright
Copyright © 2000 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electronic and Computer Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1007/BF02773241
Publisher site
See Article on Publisher Site

Abstract

A new method for studying charge degradation of MIS structures by applying a controlled current load to the structure and taking the time dependence of the voltage is suggested. It allows designers (without switching the structure) to monitor changes in the charge state of MIS structures under the conditions when the capacitance is charged and the charge is injected into the insulator. Charge degradation of metal-PSG-passivated thermal silicon dioxide-insulator structures was studied. It was found that both the SiO2 space charge and the density of fast surface states generated by tunnel electron injection from the SiO2 electrode decrease once current load has disappeared.

Journal

Russian MicroelectronicsSpringer Journals

Published: Dec 4, 2007

References

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