The influence of the sizes of the cross section of mesapiezoresistors on their characteristics

The influence of the sizes of the cross section of mesapiezoresistors on their characteristics The influence of the width of polysilicon mesapiezoresistors with dielectric insulation on their sheet resistance and piezosensitivity under the conditions of the formation of the passivation coating consisting of thermal silicon dioxide is investigated experimentally. A strong increase in the sheet resistance upon decreasing the width of mesapiezoresistors is found in the range 3 μm ≤ W ≤ 10 μm, which is associated with a decrease in the cross section and impurity segregation in the course of oxidation. The same effect is also observed for mesapiezoresistors fabricated based on SOI structures with a single-crystal silicon layer. It is established that a decrease in the width leads to an increase in the longitudinal piezosensitivity and a drop of the transverse piezosensitivity. The temperature coefficient of resistivity for the narrower boron-doped resistors weakly decreases for the selected concentration and remains constant for phosphorus-doped resistors. A simple model is suggested to interpret the behavior of the sheet resistance and piezosensitivity. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

The influence of the sizes of the cross section of mesapiezoresistors on their characteristics

Loading next page...
 
/lp/springer_journal/the-influence-of-the-sizes-of-the-cross-section-of-mesapiezoresistors-xhkwt8lr5s
Publisher
Springer Journals
Copyright
Copyright © 2011 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739711020041
Publisher site
See Article on Publisher Site

Abstract

The influence of the width of polysilicon mesapiezoresistors with dielectric insulation on their sheet resistance and piezosensitivity under the conditions of the formation of the passivation coating consisting of thermal silicon dioxide is investigated experimentally. A strong increase in the sheet resistance upon decreasing the width of mesapiezoresistors is found in the range 3 μm ≤ W ≤ 10 μm, which is associated with a decrease in the cross section and impurity segregation in the course of oxidation. The same effect is also observed for mesapiezoresistors fabricated based on SOI structures with a single-crystal silicon layer. It is established that a decrease in the width leads to an increase in the longitudinal piezosensitivity and a drop of the transverse piezosensitivity. The temperature coefficient of resistivity for the narrower boron-doped resistors weakly decreases for the selected concentration and remains constant for phosphorus-doped resistors. A simple model is suggested to interpret the behavior of the sheet resistance and piezosensitivity.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 30, 2011

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Search

Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly

Organize

Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.

Access

Get unlimited, online access to over 18 million full-text articles from more than 15,000 scientific journals.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve

Freelancer

DeepDyve

Pro

Price

FREE

$49/month
$360/year

Save searches from
Google Scholar,
PubMed

Create lists to
organize your research

Export lists, citations

Read DeepDyve articles

Abstract access only

Unlimited access to over
18 million full-text articles

Print

20 pages / month

PDF Discount

20% off