The influence of the width of polysilicon mesapiezoresistors with dielectric insulation on their sheet resistance and piezosensitivity under the conditions of the formation of the passivation coating consisting of thermal silicon dioxide is investigated experimentally. A strong increase in the sheet resistance upon decreasing the width of mesapiezoresistors is found in the range 3 μm ≤ W ≤ 10 μm, which is associated with a decrease in the cross section and impurity segregation in the course of oxidation. The same effect is also observed for mesapiezoresistors fabricated based on SOI structures with a single-crystal silicon layer. It is established that a decrease in the width leads to an increase in the longitudinal piezosensitivity and a drop of the transverse piezosensitivity. The temperature coefficient of resistivity for the narrower boron-doped resistors weakly decreases for the selected concentration and remains constant for phosphorus-doped resistors. A simple model is suggested to interpret the behavior of the sheet resistance and piezosensitivity.
Russian Microelectronics – Springer Journals
Published: Mar 30, 2011
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