The influence of constructive parameters on the threshold voltage of nanodimensional p-Channel SOI MOS transistors

The influence of constructive parameters on the threshold voltage of nanodimensional p-Channel... The influence of the thickness of the silicon film and hole concentration in the p-channel nanodimensional MOS transistor based on the SOI structure is considered. The formulas for the computation of these dependences are derived and graphic dependences are presented. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

The influence of constructive parameters on the threshold voltage of nanodimensional p-Channel SOI MOS transistors

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2012 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739712070207
Publisher site
See Article on Publisher Site

Abstract

The influence of the thickness of the silicon film and hole concentration in the p-channel nanodimensional MOS transistor based on the SOI structure is considered. The formulas for the computation of these dependences are derived and graphic dependences are presented.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 7, 2012

References

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