ISSN 10637397, Russian Microelectronics, 2012, Vol. 41, No. 7, pp. 379–382. © Pleiades Publishing, Ltd., 2012.
Original Russian Text © B.K. Petrov, A.A. Krasnov, 2011, published in Izvestiya Vysshikh Uchebnykh Zavedenii. Elektronika, 2011, No. 3, pp. 40–43.
In modern transistors, which are produced by Intel
and AMD, the silicononinsulator (SOI) structure
prevails. In their press releases, Intel and AMD pro
vide summary information on the production, con
structive, and electric parameters of complementary
pairs of produced transistors . We note that prefer
entially the data on the operation of
tors are published, while the information on parame
channel MOS transistors is extremely lim
ited. This is possibly associated with the complexity of
the band structure of
channel transistors and, corre
spondingly, with the complexity of computations.
We can derive simple formulas for engineering
computations of electric parameters of
transistors such as threshold voltage
introducing a series of assumptions. A thin highly
Si film is inverted completely in the structure
channel MOS transistor (Fig. 1) in the
absence of gate voltage (
= 0) due to the contact
The valence band of bulk silicon involves three sub
bands. For all three subbands, the maximum is located
The Influence of Constructive Parameters on the Threshold Voltage
Channel SOI MOS Transistors
B. K. Petrov and A. A. Krasnov
Voronezh State University, Universitetskaya pl. 1, Voronezh, 394893 Russia
Received November 19, 2010
—The influence of the thickness of the silicon film and hole concentration in the
mensional MOS transistor based on the SOI structure is considered. The formulas for the computation of
these dependences are derived and graphic dependences are presented.
– – – – –
Structure of the
nanodimensional SOI MOS transistor.