Get 20M+ Full-Text Papers For Less Than $1.50/day. Start a 14-Day Trial for You or Your Team.

Learn More →

The influence of boundary conditions on the electrical conductivity of a thin cylindrical wire

The influence of boundary conditions on the electrical conductivity of a thin cylindrical wire Within the kinetic approach, the high-frequency electrical conductivity of a thin semiconductor circular cross-section wire is calculated. The radius of the wire is assumed to be small compared with the characteristic skin depth that allows neglecting the skin effect. A model taking into account the dependence of the reflectivity coefficient on the surface roughness factor and the angle of incidence of the charge carriers at the inner border of the wire was used as the boundary conditions for the nonequilibrium distribution function of the charge carriers The extreme cases of a degenerate semiconductor and a nondegenerate one are considered. The results obtained are compared to the calculations for the model of Fuchs diffuse-specular boundary conditions. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

The influence of boundary conditions on the electrical conductivity of a thin cylindrical wire

Loading next page...
 
/lp/springer_journal/the-influence-of-boundary-conditions-on-the-electrical-conductivity-of-QYPU99LO8e

References (13)

Publisher
Springer Journals
Copyright
Copyright © 2016 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
DOI
10.1134/S1063739716020074
Publisher site
See Article on Publisher Site

Abstract

Within the kinetic approach, the high-frequency electrical conductivity of a thin semiconductor circular cross-section wire is calculated. The radius of the wire is assumed to be small compared with the characteristic skin depth that allows neglecting the skin effect. A model taking into account the dependence of the reflectivity coefficient on the surface roughness factor and the angle of incidence of the charge carriers at the inner border of the wire was used as the boundary conditions for the nonequilibrium distribution function of the charge carriers The extreme cases of a degenerate semiconductor and a nondegenerate one are considered. The results obtained are compared to the calculations for the model of Fuchs diffuse-specular boundary conditions.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 31, 2016

There are no references for this article.