Within the kinetic approach, the high-frequency electrical conductivity of a thin semiconductor circular cross-section wire is calculated. The radius of the wire is assumed to be small compared with the characteristic skin depth that allows neglecting the skin effect. A model taking into account the dependence of the reflectivity coefficient on the surface roughness factor and the angle of incidence of the charge carriers at the inner border of the wire was used as the boundary conditions for the nonequilibrium distribution function of the charge carriers The extreme cases of a degenerate semiconductor and a nondegenerate one are considered. The results obtained are compared to the calculations for the model of Fuchs diffuse-specular boundary conditions.
Russian Microelectronics – Springer Journals
Published: Mar 31, 2016
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