ISSN 10637397, Russian Microelectronics, 2015, Vol. 44, No. 1, pp. 22–26. © Pleiades Publishing, Ltd., 2015.
Original Russian Text © P.K. Skorobogatov, A.V. Sogoyan, G.G. Davydov, A.N. Egorov, D.V. Savchenkov, 2015, published in Mikroelektronika, 2015, Vol. 44, No. 1, pp. 28–33.
Pulsed laser irradiation is now being widely used to
simulate volume and local dose rate effects in semi
conductor devices and integrated circuits (ICs). Inves
tigations and experiments [1–8], on the one hand,
supported the highefficiency of laser ionization
sources and, on the other hand, revealed a number of
facts that limit their use.
Multilayer metallization placed over the sensitive
region considerably reduces the effect of laser irradia
tion, while the reduction in design rules of modern ICs
up to values that are comparable or lower than the laser
radiation (LR) wavelength is responsible for the effect
of the boundary shapes of exposure regions and the
laser polarization direction on the transient radiation
response of ICs.
In , the transmission of white light through sin
gle rectangular apertures implemented in a silver opti
cally nontransparent foil is considered. Measurements
of angular dependence of light transmission through
the rectangular subwavelength aperture showed that
the transmission spectrum depends on the polariza
tion angle of the incident light.
In , the possibility is demonstrated of the
extraordinary transmission of optical radiation energy
through multilayer metallization of modern ICs. The
analysis of the possible mechanisms of radiation trans
mission, including the use of rigorous coupledwave
analysis (RCWA) , showed the interdependence of
electromagnetic fields in neighboring metallization
regions that is responsible for the amplification or
attenuation of optical radiation due to the positional
relationship of the boundaries of metallization bus
This phenomenon is of particular interest when
using laser irradiation to simulate the single effects of
heavy ions. Most of the currently available sources of
focused laser radiation possess linear polarization.
This paper is devoted to the quantitative estimation of
the effect of the laser polarization direction on the
transient radiation response of ICs.
1. DESCRIPTION OF EXPERIMENT
The IC 4 Mb ROM implemented using CMOS
m is taken to be the object of
research. A PIKO4 testing facility  with a wave
length of 0.87
m is used as the LR source.
The purpose of the experiment is to compare tran
sient radiation responses of LSIC when scanning the
same region of the crystal with focused laser radiation
at different polarization angles. The characteristics of
the positioning apparatus  make it possible to scan
the given region at polarization angles of
Positioning is performed by previously determined
reference points on the topology of the metallization
of the upper level. In the course of the experiment, we
measured the amplitude of the current pulse in the
LSIC power circuit.
2. EXPERIMENTCALCULATED SIMULATION
Based on the analysis of the design topology, we
chose the region of the crystal that satisfies the follow
1. The possibility of visual reference for the exact
positioning of the LR beam when changing the direc
tion of polarization;
2. The existence of a region without metallization
for transmission of laser radiation to the active region
Figure 1 shows the position of the selected region,
its topology, and the structure of the metallization bus
The Impact of Laser Polarization Direction on Local Dose Rate
Effects Simulation for Modern Integrated Circuits
P. K. Skorobogatov, A. V. Sogoyan, G. G. Davydov, A. N. Egorov, and D. V. Savchenkov
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow, Russia
JSC Specialized Electronic Systems (SPELS), Moscow, Russia
email: firstname.lastname@example.org, email@example.com, firstname.lastname@example.org, email@example.com, firstname.lastname@example.org
Received May 20, 2014
—The effect of the direction of laser polarization on the transient radiation response of an IC mem
ory device implemented using CMOS technology 0.18
m is estimated. The effect of laser polarization is
investigated both for local exposure and exposure on the entire crystal. It is shown that the direction of laser
polarization should be taken into account when simulating local dose rate effects.