The results obtained in research tests of kinetics of a radiation-induced formation of surface states in a MOS structure in an atmosphere of molecular hydrogen in various field modes are represented. It is found that an important element of the process of accumulation of radiation-induced surface states is the interaction between hydric complexes and electrons of the substrate. The obtained data allow considering hydrogenic and conversion concepts from the perspective of an integral hydrogenic-electron model for the incorporation of surface states. Under the proposed approach, both the existence of positive hydric complexes in the proximity of oxide-silicon interface and the interaction between these complexes and electrons from a substrate are necessary for the formation of the surface states. Both components would be a factor constraining the rate of formation of the surface states, depending on particular conditions.
Russian Microelectronics – Springer Journals
Published: Mar 26, 2014
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