The hydrogenic-electron model of accumulation of surface states on the oxide-semiconductor interface under the effects of ionizing radiation

The hydrogenic-electron model of accumulation of surface states on the oxide-semiconductor... The results obtained in research tests of kinetics of a radiation-induced formation of surface states in a MOS structure in an atmosphere of molecular hydrogen in various field modes are represented. It is found that an important element of the process of accumulation of radiation-induced surface states is the interaction between hydric complexes and electrons of the substrate. The obtained data allow considering hydrogenic and conversion concepts from the perspective of an integral hydrogenic-electron model for the incorporation of surface states. Under the proposed approach, both the existence of positive hydric complexes in the proximity of oxide-silicon interface and the interaction between these complexes and electrons from a substrate are necessary for the formation of the surface states. Both components would be a factor constraining the rate of formation of the surface states, depending on particular conditions. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

The hydrogenic-electron model of accumulation of surface states on the oxide-semiconductor interface under the effects of ionizing radiation

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Publisher
Pleiades Publishing
Copyright
Copyright © 2014 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739714020103
Publisher site
See Article on Publisher Site

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