The effects of the silicon wafer resistivity on the performance of microelectrical discharge machining

The effects of the silicon wafer resistivity on the performance of microelectrical discharge... In this study, the performance of Si wafer machining by employing the die-sinking microelectrical discharge machining technique is reported. Specifically, the machining performance was examined on both high- (1–10 Ω cm) and low-resistivity (0.001–0.005 Ω cm) Si wafers by means of using a range of discharge energies. In this regard, the machining time, material removal rate, surface quality, surface roughness, and material mapping, which are categorized among the important properties in micromachining, have been investigated. In order to analyze the surface properties and to perform the elemental analysis, the scanning electron microscope and energy-dispersive X-ray spectroscopy were used. In contrast, the 3D surface profiler was used to evaluate the roughness of machined surface. The results of this experimental study revealed that the electrical resistivity and discharge energy parameter of microelectrical discharge machining had a great influence on the Si wafer machining performances. The observations in this study indicated a decrease in machining time, high material removal rate, and high surface roughness with an increased discharge energy values. Overall, it was learnt that the minimum amount of energy required to machine Si wafer was 5 μJ for both low and high-resistivity Si. In addition, the highest material removal of 5.842 × 10−5 mm3/s was observed for low-resistivity Si. On the contrary, the best surface roughness, R a, of 0.6203 μm was achieved for high-resistivity Si and it also pointed to a higher carbon percentage after the machining process. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png The International Journal of Advanced Manufacturing Technology Springer Journals

The effects of the silicon wafer resistivity on the performance of microelectrical discharge machining

Loading next page...
 
/lp/springer_journal/the-effects-of-the-silicon-wafer-resistivity-on-the-performance-of-LorpIH0wL0
Publisher
Springer London
Copyright
Copyright © 2017 by Springer-Verlag London Ltd.
Subject
Engineering; Industrial and Production Engineering; Media Management; Mechanical Engineering; Computer-Aided Engineering (CAD, CAE) and Design
ISSN
0268-3768
eISSN
1433-3015
D.O.I.
10.1007/s00170-017-1190-4
Publisher site
See Article on Publisher Site

Abstract

In this study, the performance of Si wafer machining by employing the die-sinking microelectrical discharge machining technique is reported. Specifically, the machining performance was examined on both high- (1–10 Ω cm) and low-resistivity (0.001–0.005 Ω cm) Si wafers by means of using a range of discharge energies. In this regard, the machining time, material removal rate, surface quality, surface roughness, and material mapping, which are categorized among the important properties in micromachining, have been investigated. In order to analyze the surface properties and to perform the elemental analysis, the scanning electron microscope and energy-dispersive X-ray spectroscopy were used. In contrast, the 3D surface profiler was used to evaluate the roughness of machined surface. The results of this experimental study revealed that the electrical resistivity and discharge energy parameter of microelectrical discharge machining had a great influence on the Si wafer machining performances. The observations in this study indicated a decrease in machining time, high material removal rate, and high surface roughness with an increased discharge energy values. Overall, it was learnt that the minimum amount of energy required to machine Si wafer was 5 μJ for both low and high-resistivity Si. In addition, the highest material removal of 5.842 × 10−5 mm3/s was observed for low-resistivity Si. On the contrary, the best surface roughness, R a, of 0.6203 μm was achieved for high-resistivity Si and it also pointed to a higher carbon percentage after the machining process.

Journal

The International Journal of Advanced Manufacturing TechnologySpringer Journals

Published: Oct 18, 2017

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Search

Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly

Organize

Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.

Access

Get unlimited, online access to over 18 million full-text articles from more than 15,000 scientific journals.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve

Freelancer

DeepDyve

Pro

Price

FREE

$49/month
$360/year

Save searches from
Google Scholar,
PubMed

Create lists to
organize your research

Export lists, citations

Read DeepDyve articles

Abstract access only

Unlimited access to over
18 million full-text articles

Print

20 pages / month

PDF Discount

20% off