The effect of ionizing radiation on the characteristics of silicon-germanium microwave ICs has been experimentally studied. Radiation tolerance criteria have been established and absolute tolerance levels of the SiGe ICs to dose and pulse ionizing radiation have been determined. Comparative analysis of the tolerance factors of the microwave ICs fabricated using different technologies is made.
Russian Microelectronics – Springer Journals
Published: Apr 6, 2010
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