The effect of ionizing radiation on the characteristics of silicon-germanium microwave integrated circuits

The effect of ionizing radiation on the characteristics of silicon-germanium microwave integrated... The effect of ionizing radiation on the characteristics of silicon-germanium microwave ICs has been experimentally studied. Radiation tolerance criteria have been established and absolute tolerance levels of the SiGe ICs to dose and pulse ionizing radiation have been determined. Comparative analysis of the tolerance factors of the microwave ICs fabricated using different technologies is made. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

The effect of ionizing radiation on the characteristics of silicon-germanium microwave integrated circuits

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2010 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739710020071
Publisher site
See Article on Publisher Site

Abstract

The effect of ionizing radiation on the characteristics of silicon-germanium microwave ICs has been experimentally studied. Radiation tolerance criteria have been established and absolute tolerance levels of the SiGe ICs to dose and pulse ionizing radiation have been determined. Comparative analysis of the tolerance factors of the microwave ICs fabricated using different technologies is made.

Journal

Russian MicroelectronicsSpringer Journals

Published: Apr 6, 2010

References

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