A decrease in the residual pressure to 10–6 Pa during the deposition of bismuth films results in low-temperature “metallic” conductance of the films. Cross-shaped microstructures made of these films exhibit the property of ballistic transport, which is typical of two-dimensional systems. This property shows up as a bend of the current–voltage characteristics (CVCs). The value of bend resistance changes in inverse proportion to the width of interconnects and drops with increasing temperature in the range of 4.2–77 K. The free path of conduction electrons, are responsible for the CVC bend, was estimated at more than 1 μm.
Russian Microelectronics – Springer Journals
Published: Oct 10, 2004
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