The Composition Dependence of the Band Gap Energy for the O-Rich ZnSexO1−x

The Composition Dependence of the Band Gap Energy for the O-Rich ZnSexO1−x A model was constructed to describe the band gap reduction of the O-rich ZnSexO1−x. The results show that the band gap reduction resulting from the upward movement of the valence band maximum (VBM) is larger than that resulting from the downward movement of the conduction band minimum (CBM), which suggests that the Se content has a larger influence on the VBM than it does on the CBM. It was also discovered that the physical mechanism for the band evolution in the O-rich range is quite different from that in the Se-rich range. The band gap reduction for the O-rich ZnSexO1−x is mainly due to two factors: the impurity–impurity interaction, and the intraband coupling within the valence band and the conduction band. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Electronic Materials Springer Journals

The Composition Dependence of the Band Gap Energy for the O-Rich ZnSexO1−x

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Publisher
Springer US
Copyright
Copyright © 2018 by The Minerals, Metals & Materials Society
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials; Electronics and Microelectronics, Instrumentation; Solid State Physics
ISSN
0361-5235
eISSN
1543-186X
D.O.I.
10.1007/s11664-018-6265-y
Publisher site
See Article on Publisher Site

Abstract

A model was constructed to describe the band gap reduction of the O-rich ZnSexO1−x. The results show that the band gap reduction resulting from the upward movement of the valence band maximum (VBM) is larger than that resulting from the downward movement of the conduction band minimum (CBM), which suggests that the Se content has a larger influence on the VBM than it does on the CBM. It was also discovered that the physical mechanism for the band evolution in the O-rich range is quite different from that in the Se-rich range. The band gap reduction for the O-rich ZnSexO1−x is mainly due to two factors: the impurity–impurity interaction, and the intraband coupling within the valence band and the conduction band.

Journal

Journal of Electronic MaterialsSpringer Journals

Published: Apr 3, 2018

References

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