The Aging Mechanism of a LiF Film with Copper Nanoclusters and Its Influence on the Memristor Performance

The Aging Mechanism of a LiF Film with Copper Nanoclusters and Its Influence on the Memristor... DOI 10.1007/s11182-018-1412-8 Russian Physics Journal, Vol. 61, No. 2, June, 2018 (Russian Original No. 2, February, 2018) BRIEF COMMUNICATIONS THE AGING MECHANISM OF A LiF FILM WITH COPPER NANOCLUSTERS AND ITS INFLUENCE ON THE MEMRISTOR PERFORMANCE 1 1 1 2 L. I. Shchepina, V. L. Papernyi, A. A. Chernykh, and N. A. Ivanov UDC 538.9 Keywords: copper nanoclusters, temporal degradation, memristor parameters. Currently the most promising lines of research are the development of nanosized bit-cell memory and designing microelectronic devices a few nanometers in the size. The resistive switches relying on thin-film elements have been recently reported [1]; it should be noted that a positive voltage bias on the specimen gives rise to a low-resistance state (on), while a negative voltage bias – to high-resistance state (off). In particular, this character of the current-voltage characteristics was observed in the LiF films with copper nanoclusters (Cu NCs) [2]. The memristor operation parameter, determined from the ratio of the currents in the on- and off states, was found to be equal to 510 at the voltage 0.6 V. During the half-a-year storage of the films, this parameter decreased to 410 . The purpose of this study is to identify the aging http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Physics Journal Springer Journals

The Aging Mechanism of a LiF Film with Copper Nanoclusters and Its Influence on the Memristor Performance

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Publisher
Springer Journals
Copyright
Copyright © 2018 by Springer Science+Business Media, LLC, part of Springer Nature
Subject
Physics; Physics, general; Optics, Lasers, Photonics, Optical Devices; Condensed Matter Physics; Nuclear Physics, Heavy Ions, Hadrons; Theoretical, Mathematical and Computational Physics
ISSN
1064-8887
eISSN
1573-9228
D.O.I.
10.1007/s11182-018-1412-8
Publisher site
See Article on Publisher Site

Abstract

DOI 10.1007/s11182-018-1412-8 Russian Physics Journal, Vol. 61, No. 2, June, 2018 (Russian Original No. 2, February, 2018) BRIEF COMMUNICATIONS THE AGING MECHANISM OF A LiF FILM WITH COPPER NANOCLUSTERS AND ITS INFLUENCE ON THE MEMRISTOR PERFORMANCE 1 1 1 2 L. I. Shchepina, V. L. Papernyi, A. A. Chernykh, and N. A. Ivanov UDC 538.9 Keywords: copper nanoclusters, temporal degradation, memristor parameters. Currently the most promising lines of research are the development of nanosized bit-cell memory and designing microelectronic devices a few nanometers in the size. The resistive switches relying on thin-film elements have been recently reported [1]; it should be noted that a positive voltage bias on the specimen gives rise to a low-resistance state (on), while a negative voltage bias – to high-resistance state (off). In particular, this character of the current-voltage characteristics was observed in the LiF films with copper nanoclusters (Cu NCs) [2]. The memristor operation parameter, determined from the ratio of the currents in the on- and off states, was found to be equal to 510 at the voltage 0.6 V. During the half-a-year storage of the films, this parameter decreased to 410 . The purpose of this study is to identify the aging

Journal

Russian Physics JournalSpringer Journals

Published: Jun 4, 2018

References

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