ISSN 1063-7397, Russian Microelectronics, 2006, Vol. 35, No. 4, pp. 235–242. © Pleiades Publishing, Inc., 2006.
Original Russian Text © M.I. Gorlov, V.I. Plebanovich, A.V. Strogonov, 2006, published in Mikroelektronika, 2006, Vol. 35, No. 4, pp. 277–284.
Integrated-circuit (IC) design entails assessing the
resistance of the metallization pattern to electromigra-
tion and calculating interconnection reliability charac-
teristics from the results of accelerated tests.
Although aluminum and its alloys remain the most
useful conducting materials for modern ICs, metalliza-
tion patterns must meet more demanding requirements
nowadays. They must endure high current densities as
a result of decreasing cross-sectional area, operate at
high clock rates, have low contact resistance, provide
high step-coverage quality, and resist electromigration
This paper reports on experiments concerned with
the evaluation of time to failure for two types of Al met-
allization pattern used in the ICs of the 1554TBM and
1594T series. The parameter is ﬁrst determined at ele-
vated temperatures and current densities, and the
results are then extrapolated to normal conditions
according to the procedure deﬁned by an appropriate
2. TEST PROCEDURE
The test specimens were made in the form of a sec-
tional arrangement of Al strips with a total length of
Testing the Electromigration Resistance of Al Metallization
Patterns by Electrical-Resistance Measurement
M. I. Gorlov
, V. I. Plebanovich
, and A. V. Strogonov
Voronezh State Technical University, Voronezh, Russia
NPO Integral, Minsk, Belarus
Received December 28, 2004
—The results are presented of an experimental evaluation of electromigration resistance for two types
of Al metallization pattern used in the ICs of the 1554TBM and 1594T series. The experimental procedure is
based on electrical-resistance measurements. Gamma-percent lifetime is calculated.
Metallization pattern Thin
Sketch of the electromigration-test structure.