Temperature induced anomalous exciton localization in InGaN/GaN and GaN/AlInN quantum wells

Temperature induced anomalous exciton localization in InGaN/GaN and GaN/AlInN quantum wells This paper elucidates the details of exciton localization dynamics in InGaN/GaN and GaN/AlInN quantum wells (QWs) using Monte Carlo simulation for a wide range of temperatures (10–300 K). We find that the phonon-induced variation of exciton lifetimes has remarkable effects on the photoluminescence (PL) peak position and the line-width. The red-shift of PL peak position at high temperature is clarified. The combined effects of phonon-induced radiative lifetime of excitons and the band-gap shrinkage at high temperature show the most reasonable agreement with the experimentally observed red-shift of the PL peak position. We have also quantitatively explained the temperature dependence of the W-shaped line-width in both InGaN/GaN and GaN/AlInN QWs. These results are highly significant to understand the emission properties of III-nitride QWs optoelectronic devices. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Computational Electronics Springer Journals

Temperature induced anomalous exciton localization in InGaN/GaN and GaN/AlInN quantum wells

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Publisher
Springer US
Copyright
Copyright © 2017 by Springer Science+Business Media, LLC, part of Springer Nature
Subject
Engineering; Mathematical and Computational Engineering; Electrical Engineering; Theoretical, Mathematical and Computational Physics; Optical and Electronic Materials; Mechanical Engineering
ISSN
1569-8025
eISSN
1572-8137
D.O.I.
10.1007/s10825-017-1115-3
Publisher site
See Article on Publisher Site

Abstract

This paper elucidates the details of exciton localization dynamics in InGaN/GaN and GaN/AlInN quantum wells (QWs) using Monte Carlo simulation for a wide range of temperatures (10–300 K). We find that the phonon-induced variation of exciton lifetimes has remarkable effects on the photoluminescence (PL) peak position and the line-width. The red-shift of PL peak position at high temperature is clarified. The combined effects of phonon-induced radiative lifetime of excitons and the band-gap shrinkage at high temperature show the most reasonable agreement with the experimentally observed red-shift of the PL peak position. We have also quantitatively explained the temperature dependence of the W-shaped line-width in both InGaN/GaN and GaN/AlInN QWs. These results are highly significant to understand the emission properties of III-nitride QWs optoelectronic devices.

Journal

Journal of Computational ElectronicsSpringer Journals

Published: Dec 14, 2017

References

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