1063-7397/03/3202- $25.00 © 2003 MAIK “Nauka /Interperiodica”
Russian Microelectronics, Vol. 32, No. 2, 2003, pp. 95–96. Translated from Mikroelektronika, Vol. 32, No. 2, 2003, pp. 121–123.
Original Russian Text Copyright © 2003 by Vlasov, Parchinskii, Ligai.
Low-fusible lead borosilicate glass (LBSG) has
gained widespread acceptance in microelectronics as a
material for passivating or insulating coatings [1, 2]. It
is well known that the semiconductor–insulator inter-
face can have a strong, even critical, inﬂuence on the
characteristics of semiconductor devices. This arouses
an interest in the electrical properties of the interface
between LBSG and a semiconductor, e.g., silicon.
In this work, we investigated the temperature depen-
dence of the surface generation velocity
Si/LBSG interface (as with Si passivation). This quan-
tity is of primary importance to the performance of the
interface, determining the surface generation current
LBSG was deposited on a silicon surface by electro-
phoresis of a suspension containing a ﬁne glass mix-
ture, followed by partial fusion and annealing. The
fusion was performed at 680
C for 10 min, and the
annealing, at 400
C for 10 min. The glass coating
cm thick. The composition
and electrical properties of the glass were as reported in
. On the whole, the passivation followed a relevant
standard. An n-Si(111) wafer with a resistivity of
cm served as a substrate.
The surface generation velocity was measured by
the method of pulsed metal–insulator–semiconductor
(MIS) capacitor [3, 4]. To this end, test MIS structures
were fabricated by vacuum vapor deposition of a
Al gate electrode on the glass. The capaci-
tance of the structures was 35–38 pF at accumulation
voltages and 13–17 pF at inversion ones.
Capacitance relaxation was examined by switching
the gate voltage from a moderate-inversion level (–28
to –24 V) to a strong-inversion one (–36 to –32 V). This
mode of measurement allowed us to neglect the contri-
bution of changes in interface-trap charge states to vari-
ations in capacitance [5, 6]. The characteristics mea-
sured were processed by a procedure put forward in 
and modiﬁed in .
RESULTS AND DISCUSSION
The ﬁgure shows the values of
obtained at tem-
C. Notice that
increases with decreasing temperature, from 80 cm/s at
C to 500 cm/s at
C. However, surface
generation velocity is currently considered independent
of temperature [3, 6], as conﬁrmed by experiments on
interface [7, 8].
Temperature Dependence of Carrier Generation
at the Silicon–Lead-Borosilicate-Glass Interface
S. I. Vlasov, P. B. Parchinskii, and L. G. Ligai
Uzbek State University, Tashkent, Uzbekistan
Received January 19, 2002
—The carrier generation at the silicon–lead-borosilicate-glass interface is studied by the method of
pulsed MIS capacitor. It is shown that the temperature dependence of the surface generation velocity is gov-
erned by the tunnel and tunnel-activated charge-state alteration of glass traps located near the interface.
–10 –20 –30 –40 –50 –60
Temperature dependence of surface generation velocity.