Temperature and frequency dependent dielectric and impedance characteristics of double perovskite Bi2MnCoO6 electronic material

Temperature and frequency dependent dielectric and impedance characteristics of double perovskite... The temperature and field dependent capacitive as well as conducting characteristics of double perovskite electronic material (Bi2MnCoO6) have been investigated using dielectric and impedance spectroscopy techniques. The electronic material has been formulated by applying a high temperature solid state reaction based ceramic processing route. The formation of the desired sample material is confirmed with a monoclinic crystal system using room temperature X-ray diffraction analysis. The uniform grain distribution is predicted from the micrograph, and the stoichiometric chemical content of the solid solution is determined from energy dispersive X-ray technique. The acquaintance between micro structural study and frequency–temperature dependent electrical properties of the compound has revealed negative temperature coefficient of resistance behaviour. The prepared compound unveils non-Debye type relaxation. The studied compound presents important dielectric properties which substantiate the material propensity for formulation of electronic devices. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science: Materials in Electronics Springer Journals

Temperature and frequency dependent dielectric and impedance characteristics of double perovskite Bi2MnCoO6 electronic material

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Publisher
Springer Journals
Copyright
Copyright © 2017 by Springer Science+Business Media, LLC, part of Springer Nature
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials
ISSN
0957-4522
eISSN
1573-482X
D.O.I.
10.1007/s10854-017-8432-y
Publisher site
See Article on Publisher Site

Abstract

The temperature and field dependent capacitive as well as conducting characteristics of double perovskite electronic material (Bi2MnCoO6) have been investigated using dielectric and impedance spectroscopy techniques. The electronic material has been formulated by applying a high temperature solid state reaction based ceramic processing route. The formation of the desired sample material is confirmed with a monoclinic crystal system using room temperature X-ray diffraction analysis. The uniform grain distribution is predicted from the micrograph, and the stoichiometric chemical content of the solid solution is determined from energy dispersive X-ray technique. The acquaintance between micro structural study and frequency–temperature dependent electrical properties of the compound has revealed negative temperature coefficient of resistance behaviour. The prepared compound unveils non-Debye type relaxation. The studied compound presents important dielectric properties which substantiate the material propensity for formulation of electronic devices.

Journal

Journal of Materials Science: Materials in ElectronicsSpringer Journals

Published: Dec 21, 2017

References

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