The temperature and field dependent capacitive as well as conducting characteristics of double perovskite electronic material (Bi2MnCoO6) have been investigated using dielectric and impedance spectroscopy techniques. The electronic material has been formulated by applying a high temperature solid state reaction based ceramic processing route. The formation of the desired sample material is confirmed with a monoclinic crystal system using room temperature X-ray diffraction analysis. The uniform grain distribution is predicted from the micrograph, and the stoichiometric chemical content of the solid solution is determined from energy dispersive X-ray technique. The acquaintance between micro structural study and frequency–temperature dependent electrical properties of the compound has revealed negative temperature coefficient of resistance behaviour. The prepared compound unveils non-Debye type relaxation. The studied compound presents important dielectric properties which substantiate the material propensity for formulation of electronic devices.
Journal of Materials Science: Materials in Electronics – Springer Journals
Published: Dec 21, 2017
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