Technology and electric characteristics of the field-effect hall sensor based on SOI structure

Technology and electric characteristics of the field-effect hall sensor based on SOI structure Dependences of electric characteristics on the technological parameters of the field-effect Hall sensors based on SOI structures (FEHS-SOI) are discussed. The manufacturing process for the formation of a magnetosensitive structure comprising the field-effect Hall sensor based on a MOSFET in the SOI structures was simulated. Electrical characteristics of the device were calculated and the optimization research devoted to the influence of process parameters on the FEHS-SOI voltage-current characteristics and sensitivity was made. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Technology and electric characteristics of the field-effect hall sensor based on SOI structure

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Publisher
Springer US
Copyright
Copyright © 2013 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739713070056
Publisher site
See Article on Publisher Site

Abstract

Dependences of electric characteristics on the technological parameters of the field-effect Hall sensors based on SOI structures (FEHS-SOI) are discussed. The manufacturing process for the formation of a magnetosensitive structure comprising the field-effect Hall sensor based on a MOSFET in the SOI structures was simulated. Electrical characteristics of the device were calculated and the optimization research devoted to the influence of process parameters on the FEHS-SOI voltage-current characteristics and sensitivity was made.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 7, 2013

References

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