Technological features of the formation of transparent conductive contacts of ITO film for LEDs based on gallium nitride

Technological features of the formation of transparent conductive contacts of ITO film for LEDs... This paper studies the properties of ITO films obtained by electron beam evaporation in a wide range of conditions: oxygen pressure from 5 × 10−4 to 4 × 10−2 Pa and the evaporation rate of 0.075–0.4 nm/s. Evaporation was carried out from granules of 3–6 mm, which consisted of a mixture of stoichiometric indium oxides and tin in the ratio of 9: 1. The deposition rate was maintained constant by a quartz sensor of deposition speed and film thickness. Evaporation was stopped upon reaching a predetermined film thickness of 200 nm. After applying the film, the samples were annealed for 30 s in nitrogen or air at a temperature of 300–700°C. The properties of the obtained films were studied in order to select the optimum deposition conditions and subsequent annealing. The ITO films obtained under optimal conditions were successfully used in structures of LEDs as transparent conductive contacts based on GaN. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Technological features of the formation of transparent conductive contacts of ITO film for LEDs based on gallium nitride

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Publisher
Springer Journals
Copyright
Copyright © 2014 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739714080137
Publisher site
See Article on Publisher Site

Abstract

This paper studies the properties of ITO films obtained by electron beam evaporation in a wide range of conditions: oxygen pressure from 5 × 10−4 to 4 × 10−2 Pa and the evaporation rate of 0.075–0.4 nm/s. Evaporation was carried out from granules of 3–6 mm, which consisted of a mixture of stoichiometric indium oxides and tin in the ratio of 9: 1. The deposition rate was maintained constant by a quartz sensor of deposition speed and film thickness. Evaporation was stopped upon reaching a predetermined film thickness of 200 nm. After applying the film, the samples were annealed for 30 s in nitrogen or air at a temperature of 300–700°C. The properties of the obtained films were studied in order to select the optimum deposition conditions and subsequent annealing. The ITO films obtained under optimal conditions were successfully used in structures of LEDs as transparent conductive contacts based on GaN.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 26, 2014

References

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