The models of electrophysical effects builtinto Sentaurus TCAD have been tested. The models providing an adequate modeling of deep submicron high-k MOSFETs have been selected. The gate and drain leakage currents for 45 nm MOSFETs with polysilicon gate and SiO2, SiO2/HfO2 and HfO2 gate dielectrics have been calculated using TCAD. It has been shown that the replacement of the traditional SiO2 gate oxide by an equivalent HfO2 dielectric reduces the gate leakage current by several orders of magnitude due to the elimination of the impact of the tunneling effect. Besides, the threshold voltage, saturation drain current, mobility, transconductance, etc., degrade within a range of 10–20%.
Russian Microelectronics – Springer Journals
Published: Feb 16, 2017
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