TCAD leakage current analysis of a 45 nm MOSFET structure with a high-k dielectric

TCAD leakage current analysis of a 45 nm MOSFET structure with a high-k dielectric The models of electrophysical effects builtinto Sentaurus TCAD have been tested. The models providing an adequate modeling of deep submicron high-k MOSFETs have been selected. The gate and drain leakage currents for 45 nm MOSFETs with polysilicon gate and SiO2, SiO2/HfO2 and HfO2 gate dielectrics have been calculated using TCAD. It has been shown that the replacement of the traditional SiO2 gate oxide by an equivalent HfO2 dielectric reduces the gate leakage current by several orders of magnitude due to the elimination of the impact of the tunneling effect. Besides, the threshold voltage, saturation drain current, mobility, transconductance, etc., degrade within a range of 10–20%. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

TCAD leakage current analysis of a 45 nm MOSFET structure with a high-k dielectric

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Publisher
Pleiades Publishing
Copyright
Copyright © 2016 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S106373971607012X
Publisher site
See Article on Publisher Site

Abstract

The models of electrophysical effects builtinto Sentaurus TCAD have been tested. The models providing an adequate modeling of deep submicron high-k MOSFETs have been selected. The gate and drain leakage currents for 45 nm MOSFETs with polysilicon gate and SiO2, SiO2/HfO2 and HfO2 gate dielectrics have been calculated using TCAD. It has been shown that the replacement of the traditional SiO2 gate oxide by an equivalent HfO2 dielectric reduces the gate leakage current by several orders of magnitude due to the elimination of the impact of the tunneling effect. Besides, the threshold voltage, saturation drain current, mobility, transconductance, etc., degrade within a range of 10–20%.

Journal

Russian MicroelectronicsSpringer Journals

Published: Feb 16, 2017

References

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