The synthesis of borosilicate coatings on n-type silicon by anodic oxidation in an ethylene glycol solution containing boric acid is studied experimentally in terms of the dependence of coating thickness and resistivity on oxidation regime and boric acid concentration. The effect of annealing at 400–600°C is investigated. On this basis, a fabrication process of anodic borosilicate diffusion sources is proposed for micro-and nanoelectronics manufacturing.
Russian Microelectronics – Springer Journals
Published: Sep 21, 2008
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