Synthesis and investigation of new materials in MIS structures for the development of physical foundations of CMOS technologies of nanoelectronics

Synthesis and investigation of new materials in MIS structures for the development of physical... Certain results of experimental investigations of recent years devoted to new materials of undergate dielectrics and gates for field-effect MOS transistors based on high-k metal oxides and metal layers, respectively, are presented. The laboratory technology of fabrication of a functional field-effect transistor based on the TaN/LaAlO3/Si structure is described briefly. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Synthesis and investigation of new materials in MIS structures for the development of physical foundations of CMOS technologies of nanoelectronics

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2010 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739710030030
Publisher site
See Article on Publisher Site

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