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- Publisher
- Springer Journals
- Copyright
- Copyright © 2010 by Pleiades Publishing, Ltd.
- Subject
- Engineering; Electrical Engineering
- ISSN
- 1063-7397
- eISSN
- 1608-3415
- DOI
- 10.1134/S1063739710030030
- Publisher site
- See Article on Publisher Site
Abstract
Certain results of experimental investigations of recent years devoted to new materials of undergate dielectrics and gates for field-effect MOS transistors based on high-k metal oxides and metal layers, respectively, are presented. The laboratory technology of fabrication of a functional field-effect transistor based on the TaN/LaAlO3/Si structure is described briefly.
Journal
Russian Microelectronics – Springer Journals
Published: May 20, 2010