Synthesis and Characterization of Cross-Linked Nanocomposite as a Gate Dielectric for p-Type Silicon Field-Effect Transistor

Synthesis and Characterization of Cross-Linked Nanocomposite as a Gate Dielectric for p-Type... A good cross-linking between a povidone–silicon oxide nanocomposite has been created using a polar solvent. Furthermore, the effect of annealing temperatures (150°C, 200°C, and 240°C) on the solution-processed povidone–silicon oxide dielectric films has been studied. Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy were applied to identify the chemical interactions of the nanocomposite. Morphology of the thin films was examined using atomic force microscopy. Electrical parameters of field effect transistors (FETs) were calculated on the basis of the information obtained from current–voltage (I–V) and capacitance–voltage (C–V) measurements in the metal–insulator–semiconductor structure. Nanocomposite films had very low surface roughness (0.036–0.084 nm). Si-O-Si and Si-O-C covalent bonds as well as Si-OH hydrogen bonds were formed in the nanocomposite structure. High hole mobilities (1.15–3.87 cm2 V−1 s−1) and low leakage current densities were obtained for the p-type Si FETs. The decrease in the Si-OH hydrogen bonds in the dielectric film annealed at 150°C led to a decrease in capacitance and leakage current as well as threshold voltage, and resulted in an increase in mobility and on/off current ratio. By further increasing the annealing temperatures (200°C and 240°C), the binding energies of all the bonds were shifted toward lower values. Therefore, it was concluded that many bonds could have degraded and that defects might have formed in the dielectric film nanostructure leading to a decline in the electrical parameters of the FETs. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Electronic Materials Springer Journals

Synthesis and Characterization of Cross-Linked Nanocomposite as a Gate Dielectric for p-Type Silicon Field-Effect Transistor

Loading next page...
 
/lp/springer_journal/synthesis-and-characterization-of-cross-linked-nanocomposite-as-a-gate-1PTHAuh1TS
Publisher
Springer Journals
Copyright
Copyright © 2018 by The Minerals, Metals & Materials Society
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials; Electronics and Microelectronics, Instrumentation; Solid State Physics
ISSN
0361-5235
eISSN
1543-186X
D.O.I.
10.1007/s11664-018-6231-8
Publisher site
See Article on Publisher Site

Abstract

A good cross-linking between a povidone–silicon oxide nanocomposite has been created using a polar solvent. Furthermore, the effect of annealing temperatures (150°C, 200°C, and 240°C) on the solution-processed povidone–silicon oxide dielectric films has been studied. Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy were applied to identify the chemical interactions of the nanocomposite. Morphology of the thin films was examined using atomic force microscopy. Electrical parameters of field effect transistors (FETs) were calculated on the basis of the information obtained from current–voltage (I–V) and capacitance–voltage (C–V) measurements in the metal–insulator–semiconductor structure. Nanocomposite films had very low surface roughness (0.036–0.084 nm). Si-O-Si and Si-O-C covalent bonds as well as Si-OH hydrogen bonds were formed in the nanocomposite structure. High hole mobilities (1.15–3.87 cm2 V−1 s−1) and low leakage current densities were obtained for the p-type Si FETs. The decrease in the Si-OH hydrogen bonds in the dielectric film annealed at 150°C led to a decrease in capacitance and leakage current as well as threshold voltage, and resulted in an increase in mobility and on/off current ratio. By further increasing the annealing temperatures (200°C and 240°C), the binding energies of all the bonds were shifted toward lower values. Therefore, it was concluded that many bonds could have degraded and that defects might have formed in the dielectric film nanostructure leading to a decline in the electrical parameters of the FETs.

Journal

Journal of Electronic MaterialsSpringer Journals

Published: Mar 28, 2018

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Search

Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly

Organize

Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.

Access

Get unlimited, online access to over 18 million full-text articles from more than 15,000 scientific journals.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve

Freelancer

DeepDyve

Pro

Price

FREE

$49/month
$360/year

Save searches from
Google Scholar,
PubMed

Create lists to
organize your research

Export lists, citations

Read DeepDyve articles

Abstract access only

Unlimited access to over
18 million full-text articles

Print

20 pages / month

PDF Discount

20% off