Switchable diode effect in oxygen vacancy-modulated SrTiO3 single crystal

Switchable diode effect in oxygen vacancy-modulated SrTiO3 single crystal SrTiO3 (STO) single crystal wafer was annealed in vacuum, and co-planar metal–insulator–metal structure of Pt/Ti/STO/Ti/Pt were formed by sputtering Pt/Ti electrodes onto the surface of STO after annealing. The forming-free resistive switching behavior with self-compliance property was observed in the sample. The sample showed switchable diode effect, which is explained by a simple model that redistribution of oxygen vacancies (OVs) under the external electric field results in the formation of n–n+ junction or n+–n junction (n donated n-type semiconductor; n+ donated heavily doped n-type semiconductor). The self-compliance property is also interpreted by the formation of n–n+/n+–n junction caused by the migration of the OVs under the electric field. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Applied Physics A: Materials Science Processing Springer Journals

Loading next page...
 
/lp/springer_journal/switchable-diode-effect-in-oxygen-vacancy-modulated-srtio3-single-l3Mgv00SHi
Publisher
Springer Berlin Heidelberg
Copyright
Copyright © 2017 by Springer-Verlag GmbH Germany
Subject
Physics; Condensed Matter Physics; Optical and Electronic Materials; Nanotechnology; Characterization and Evaluation of Materials; Surfaces and Interfaces, Thin Films; Operating Procedures, Materials Treatment
ISSN
0947-8396
eISSN
1432-0630
D.O.I.
10.1007/s00339-017-1179-8
Publisher site
See Article on Publisher Site

Abstract

SrTiO3 (STO) single crystal wafer was annealed in vacuum, and co-planar metal–insulator–metal structure of Pt/Ti/STO/Ti/Pt were formed by sputtering Pt/Ti electrodes onto the surface of STO after annealing. The forming-free resistive switching behavior with self-compliance property was observed in the sample. The sample showed switchable diode effect, which is explained by a simple model that redistribution of oxygen vacancies (OVs) under the external electric field results in the formation of n–n+ junction or n+–n junction (n donated n-type semiconductor; n+ donated heavily doped n-type semiconductor). The self-compliance property is also interpreted by the formation of n–n+/n+–n junction caused by the migration of the OVs under the electric field.

Journal

Applied Physics A: Materials Science ProcessingSpringer Journals

Published: Aug 8, 2017

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 12 million articles from more than
10,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Unlimited reading

Read as many articles as you need. Full articles with original layout, charts and figures. Read online, from anywhere.

Stay up to date

Keep up with your field with Personalized Recommendations and Follow Journals to get automatic updates.

Organize your research

It’s easy to organize your research with our built-in tools.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve Freelancer

DeepDyve Pro

Price
FREE
$49/month

$360/year
Save searches from
Google Scholar,
PubMed
Create lists to
organize your research
Export lists, citations
Read DeepDyve articles
Abstract access only
Unlimited access to over
18 million full-text articles
Print
20 pages/month
PDF Discount
20% off