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YuV Koryakin, II Angelov (1974)
Chistye khimicheskie veshchestva
AV Dunaev, SA Pivovarenok, SP Kapinos, OA Semenova, AM Efremov, VI Svettsov (2010)
Fiz. Khim. Obrab. Mater.
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DV Sitanov, AM Efremov, VI Svettsov (2008)
Plasma parameters and formation and annihilation kinetics of active particles in the discharge in chlorineTeplofiz. Vys. Temp., 46
(2008)
Kinetics and mechanisms of plasma chemical etching of aluminum in chlorine
(2010)
Etching kinetics of GaAs in chlorine plasma
(2011)
Elec trical parameters of glow dc discharge plasma in the HCl/Ar mixture
A. Striganov, N. Sventitskii (1968)
Tables of spectral lines of neutral and ionized atoms
(2013)
Spectral investigation into the etching kinetics of gal lium arsenide in the chlorine and hydrogen chloride
A. Dunaev, S. Pivovarenok, S. Kapinos, A. Efremov, V. Svettsov (2011)
Spectral study of HCl plasma etching of gallium arsenideRussian Microelectronics, 40
D. Rawal, B. Sehgal, R. Muralidharan, H. Malik (2011)
Experimental Study of the Influence of Process Pressure and Gas Composition on GaAs Etching Characteristics in Cl2/BCl3-Based Inductively Coupled PlasmaPlasma Science and Technology, 13
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Tablitsy spektral’nykh linii neitral’nykh i ionizirovannykh atomov
Survey emission spectra of plasma-forming gases such as chlorine, hydrogen chloride, argon, and hydrogen, as well as the spectral composition of these gases, are investigated in the presence of the gallium arsenide semiconductor plate. The reference lines and bands for the spectral etching rate monitoring by the emission intensity of the lines and bands of the etching products are selected. It is assumed that the relation between the emission intensity of the etching products of GaAs and the etching rate in the plasma of chlorine, hydrogen chloride, and their mixtures with argon and hydrogen is described by the directly proportional dependence, which points to the possibility of the real-time control of etching using the spectral method.
Russian Microelectronics – Springer Journals
Published: May 7, 2015
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