Survey of emission spectra of the plasma of chlorine, hydrogen chloride, argon, and hydrogen

Survey of emission spectra of the plasma of chlorine, hydrogen chloride, argon, and hydrogen Survey emission spectra of plasma-forming gases such as chlorine, hydrogen chloride, argon, and hydrogen, as well as the spectral composition of these gases, are investigated in the presence of the gallium arsenide semiconductor plate. The reference lines and bands for the spectral etching rate monitoring by the emission intensity of the lines and bands of the etching products are selected. It is assumed that the relation between the emission intensity of the etching products of GaAs and the etching rate in the plasma of chlorine, hydrogen chloride, and their mixtures with argon and hydrogen is described by the directly proportional dependence, which points to the possibility of the real-time control of etching using the spectral method. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Survey of emission spectra of the plasma of chlorine, hydrogen chloride, argon, and hydrogen

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Publisher
Pleiades Publishing
Copyright
Copyright © 2015 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739715030026
Publisher site
See Article on Publisher Site

Abstract

Survey emission spectra of plasma-forming gases such as chlorine, hydrogen chloride, argon, and hydrogen, as well as the spectral composition of these gases, are investigated in the presence of the gallium arsenide semiconductor plate. The reference lines and bands for the spectral etching rate monitoring by the emission intensity of the lines and bands of the etching products are selected. It is assumed that the relation between the emission intensity of the etching products of GaAs and the etching rate in the plasma of chlorine, hydrogen chloride, and their mixtures with argon and hydrogen is described by the directly proportional dependence, which points to the possibility of the real-time control of etching using the spectral method.

Journal

Russian MicroelectronicsSpringer Journals

Published: May 7, 2015

References

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