The problem of estimating the volume lifetime τv of minority carriers in p-type Si wafers by surface-photovoltage measurements is addressed. An experiment is conducted in order to ascertain the relationship between measured and actual values of τv. The measurements are carried out on circular specimens whose thickness is reduced from about 2000 to 450 μm by stepwise etching. The specimens are cut from a Czochralski-grown rod, their actual values of τv ranging from 10 to 300 μs. The surface recombination rate of minority carriers is determined on both sides of the specimens covered with native oxide, the sides differing in surface finish. The results of the experiment allow one to determine τv up to about 400 μs.
Russian Microelectronics – Springer Journals
Published: Oct 11, 2004
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