Surface-Photovoltage Measurement of Volume Electron Lifetime in p-Si Wafers

Surface-Photovoltage Measurement of Volume Electron Lifetime in p-Si Wafers The problem of estimating the volume lifetime τv of minority carriers in p-type Si wafers by surface-photovoltage measurements is addressed. An experiment is conducted in order to ascertain the relationship between measured and actual values of τv. The measurements are carried out on circular specimens whose thickness is reduced from about 2000 to 450 μm by stepwise etching. The specimens are cut from a Czochralski-grown rod, their actual values of τv ranging from 10 to 300 μs. The surface recombination rate of minority carriers is determined on both sides of the specimens covered with native oxide, the sides differing in surface finish. The results of the experiment allow one to determine τv up to about 400 μs. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Surface-Photovoltage Measurement of Volume Electron Lifetime in p-Si Wafers

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2003 by MAIK Nauka/Interperiodica
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1022699917977
Publisher site
See Article on Publisher Site

Abstract

The problem of estimating the volume lifetime τv of minority carriers in p-type Si wafers by surface-photovoltage measurements is addressed. An experiment is conducted in order to ascertain the relationship between measured and actual values of τv. The measurements are carried out on circular specimens whose thickness is reduced from about 2000 to 450 μm by stepwise etching. The specimens are cut from a Czochralski-grown rod, their actual values of τv ranging from 10 to 300 μs. The surface recombination rate of minority carriers is determined on both sides of the specimens covered with native oxide, the sides differing in surface finish. The results of the experiment allow one to determine τv up to about 400 μs.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 11, 2004

References

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