Using the Langmuir model of adsorption from the precursor state, the phenomenon of self-organization of nanosized domains with low-pressure ethanol chemical vapor deposition of submonolayer carbonaceous coatings on the atomically-clean surface of silicon crystals (100) is investigated. The dependence of the substrate temperature and the electrical bias on the kinetics and the mechanism of the domain structuring, which is the phase transition on the silicon surface (100), is analyzed. It is shown that, in some chemically-active gaseous environments, the high etching selectivity of silicon and carbon makes it possible to use carbon islands being formed as nonlithographic masks to create nanosized integrated column structures in silicon crystals (100) by means of high-resolution plasma-chemical etching.
Russian Microelectronics – Springer Journals
Published: May 7, 2015
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