Surface effect of n-GaAs cap on the THz emission in LT-GaAs

Surface effect of n-GaAs cap on the THz emission in LT-GaAs The deposition of n-GaAs cap on low-temperature GaAs (LT-GaAs) improved the THz emission of LT-GaAs grown at a much lower temperature (< $$300\,^{\circ }$$ 300 ∘ C), where the defect density is high, without compromising the spectral bandwidth and carrier lifetimes necessary for ultrafast THz detection. The LT-GaAs grown at $$220$$ 220 and $$270\,^{\circ }$$ 270 ∘ C showed a 192 and 10% enhancement THz emission peak-to-peak intensity, respectively, while the sample grown at $$310\,^{\circ }$$ 310 ∘ C showed a 49% reduction. The n-GaAs cap reduced the As-related defects density in the LT-GaAs resulting to improved THz emission. The THz emission from the sample grown at $$310\,^{\circ }$$ 310 ∘ C with already low defect density suffered possibly due to the free carrier absorption by the n-GaAs cap. The results are relevant in future material design of LT-GaAs based photoconductive antenna. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science: Materials in Electronics Springer Journals
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Publisher
Springer US
Copyright
Copyright © 2018 by Springer Science+Business Media, LLC, part of Springer Nature
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials
ISSN
0957-4522
eISSN
1573-482X
D.O.I.
10.1007/s10854-018-9360-1
Publisher site
See Article on Publisher Site

Abstract

The deposition of n-GaAs cap on low-temperature GaAs (LT-GaAs) improved the THz emission of LT-GaAs grown at a much lower temperature (< $$300\,^{\circ }$$ 300 ∘ C), where the defect density is high, without compromising the spectral bandwidth and carrier lifetimes necessary for ultrafast THz detection. The LT-GaAs grown at $$220$$ 220 and $$270\,^{\circ }$$ 270 ∘ C showed a 192 and 10% enhancement THz emission peak-to-peak intensity, respectively, while the sample grown at $$310\,^{\circ }$$ 310 ∘ C showed a 49% reduction. The n-GaAs cap reduced the As-related defects density in the LT-GaAs resulting to improved THz emission. The THz emission from the sample grown at $$310\,^{\circ }$$ 310 ∘ C with already low defect density suffered possibly due to the free carrier absorption by the n-GaAs cap. The results are relevant in future material design of LT-GaAs based photoconductive antenna.

Journal

Journal of Materials Science: Materials in ElectronicsSpringer Journals

Published: May 28, 2018

References

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