Submicrometer- and nanometer-structure formation on the surface of epitaxial IV–VI semiconductor films by Ar-plasma treatment

Submicrometer- and nanometer-structure formation on the surface of epitaxial IV–VI... A method is presented for fabricating submicrometer and nanometer structures on epitaxial films of a IV–VI compound semiconductor on a Si(111) substrate by sputtering with an RF-induction Ar plasma. The role is identified of threading dislocations and terraces on the film surface in the formation of submicrometer and nanometer hillocks. The relationship is determined of sputtering parameters to the RF bias and process time. The self-formation of submicrometer hillocks is traced to dislocation exit sites being masked by Al-containing components. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Submicrometer- and nanometer-structure formation on the surface of epitaxial IV–VI semiconductor films by Ar-plasma treatment

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2008 by MAIK Nauka
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739708030050
Publisher site
See Article on Publisher Site

Abstract

A method is presented for fabricating submicrometer and nanometer structures on epitaxial films of a IV–VI compound semiconductor on a Si(111) substrate by sputtering with an RF-induction Ar plasma. The role is identified of threading dislocations and terraces on the film surface in the formation of submicrometer and nanometer hillocks. The relationship is determined of sputtering parameters to the RF bias and process time. The self-formation of submicrometer hillocks is traced to dislocation exit sites being masked by Al-containing components.

Journal

Russian MicroelectronicsSpringer Journals

Published: May 27, 2008

References

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