A method is presented for fabricating submicrometer and nanometer structures on epitaxial films of a IV–VI compound semiconductor on a Si(111) substrate by sputtering with an RF-induction Ar plasma. The role is identified of threading dislocations and terraces on the film surface in the formation of submicrometer and nanometer hillocks. The relationship is determined of sputtering parameters to the RF bias and process time. The self-formation of submicrometer hillocks is traced to dislocation exit sites being masked by Al-containing components.
Russian Microelectronics – Springer Journals
Published: May 27, 2008
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