Studying the uniformity of the surface resistance of Ti, Al, Ni, Cr, and Au metal films on silicon

Studying the uniformity of the surface resistance of Ti, Al, Ni, Cr, and Au metal films on silicon Nanosized Ti, Al, Ni, Cr, and Au films were deposited onto KEF-20 (100)-oriented silicon plates with a diameter of 100 mm using the method of thermal evaporation in a vacuum. The value and uniformity of the distribution of the specific electrical resistance of the metal films were estimated by measuring their thickness and surface electrical resistance via the four-probe method. The specific electrical resistance of such films was shown to be considerably higher than for bulk materials. The observed increase in the surface resistance at the edges of the film was due to both the decrease in the thickness of the film and the increase in the specific electrical resistance of the material of the film. The proved regimes were used to obtain metal layers on gallium nitride substrates. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Studying the uniformity of the surface resistance of Ti, Al, Ni, Cr, and Au metal films on silicon

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Publisher
Springer US
Copyright
Copyright © 2013 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739713080143
Publisher site
See Article on Publisher Site

Abstract

Nanosized Ti, Al, Ni, Cr, and Au films were deposited onto KEF-20 (100)-oriented silicon plates with a diameter of 100 mm using the method of thermal evaporation in a vacuum. The value and uniformity of the distribution of the specific electrical resistance of the metal films were estimated by measuring their thickness and surface electrical resistance via the four-probe method. The specific electrical resistance of such films was shown to be considerably higher than for bulk materials. The observed increase in the surface resistance at the edges of the film was due to both the decrease in the thickness of the film and the increase in the specific electrical resistance of the material of the film. The proved regimes were used to obtain metal layers on gallium nitride substrates.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 14, 2013

References

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