The method of precision thermal massometry is used to study the interaction between silicon nitride, oxygen, and nitrogen in nonisothermal heating at 300 -1300 K and a partial gas pressure of 19,998.3 Pa (150 Torr). The behavior of Si3N4 heated in forevacuum is studied. A special computer analysis of the experimentally obtained dependencies has provided kinetic equations for analyzing and determining the mechanisms of these processes and computing their activation energy. The experimental data are used for creating a hypothesis that the nitrogen sublattice of Si3N4 is dispersed before the beginning of its interaction with oxygen and nitrogen.
Refractories and Industrial Ceramics – Springer Journals
Published: Nov 29, 2007
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