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The influence of design-technological parameters of ion-sensitive field-effect transistor structures (ISFETs) on their sensitivity to pH has been considered with the use of numerical modeling. An analysis of various silicon ISFET-transistors has been carried out. It is shown thatsuspended nanowire structures with an intrinsic type of conductivity with a minimum possible diameter and maximum capacitance of the gate oxide have the greatest sensitivity.
Russian Microelectronics – Springer Journals
Published: Nov 14, 2014
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