Study of the sensitivity of pH-sensors based on silicon MOS-nanotransistors

Study of the sensitivity of pH-sensors based on silicon MOS-nanotransistors The influence of design-technological parameters of ion-sensitive field-effect transistor structures (ISFETs) on their sensitivity to pH has been considered with the use of numerical modeling. An analysis of various silicon ISFET-transistors has been carried out. It is shown thatsuspended nanowire structures with an intrinsic type of conductivity with a minimum possible diameter and maximum capacitance of the gate oxide have the greatest sensitivity. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Study of the sensitivity of pH-sensors based on silicon MOS-nanotransistors

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Publisher
Springer Journals
Copyright
Copyright © 2014 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739714070129
Publisher site
See Article on Publisher Site

Abstract

The influence of design-technological parameters of ion-sensitive field-effect transistor structures (ISFETs) on their sensitivity to pH has been considered with the use of numerical modeling. An analysis of various silicon ISFET-transistors has been carried out. It is shown thatsuspended nanowire structures with an intrinsic type of conductivity with a minimum possible diameter and maximum capacitance of the gate oxide have the greatest sensitivity.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 14, 2014

References

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