The main stages of forming silicon oxide films from the tetraethoxysilane solution using the sol-gel method are analyzed. The characteristics of the silicon oxide films grown using the optimized manufacturing route are shown to be close to the characteristics of the thermal silicon oxide in terms of the electrical parameters. The increased etching rate is explained with allowance for the peculiarities of the sol-gel process.
Russian Microelectronics – Springer Journals
Published: Nov 14, 2014
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