Study of the formation of silicon oxide films from tetraethoxysilane solution using the sol-gel method

Study of the formation of silicon oxide films from tetraethoxysilane solution using the sol-gel... The main stages of forming silicon oxide films from the tetraethoxysilane solution using the sol-gel method are analyzed. The characteristics of the silicon oxide films grown using the optimized manufacturing route are shown to be close to the characteristics of the thermal silicon oxide in terms of the electrical parameters. The increased etching rate is explained with allowance for the peculiarities of the sol-gel process. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Study of the formation of silicon oxide films from tetraethoxysilane solution using the sol-gel method

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Publisher
Springer Journals
Copyright
Copyright © 2014 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739714070105
Publisher site
See Article on Publisher Site

Abstract

The main stages of forming silicon oxide films from the tetraethoxysilane solution using the sol-gel method are analyzed. The characteristics of the silicon oxide films grown using the optimized manufacturing route are shown to be close to the characteristics of the thermal silicon oxide in terms of the electrical parameters. The increased etching rate is explained with allowance for the peculiarities of the sol-gel process.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 14, 2014

References

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