Study of the extrinsic properties of ZnO:Al grown by SILAR technique

Study of the extrinsic properties of ZnO:Al grown by SILAR technique Aluminum-doped ZnO thin films with pebble-like structures have been successfully deposited on glass substrates by successive ionic layer adsorption reaction method. The effect of percentage composition of the aluminum dopant on the flower-like clusters of the ZnO nanostructures on the structure, morphology, and optical properties was investigated. The ZnO thin films which were crystallized in hexagonal wurtzite structures with crystallite sizes of 44, 51, 56, and 43 nm for the intrinsic and 1, 3, and 5% Al-doped ZnO thin films, respectively. Preferred orientation of crystallites is in all cases in [001] direction perpendicular to the sample surface The Raman spectroscopy revealed decrease in the intensity of the ZnO characteristic peak due to the substitution of the Zn2+ atoms by the Al3+ and attributed to potential fluctuations of the alloy disorder. The introduction of the Al3+ dopant significantly increased the optical band gap. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Solid State Electrochemistry Springer Journals

Study of the extrinsic properties of ZnO:Al grown by SILAR technique

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Publisher
Springer Berlin Heidelberg
Copyright
Copyright © 2017 by Springer-Verlag Berlin Heidelberg
Subject
Chemistry; Physical Chemistry; Electrochemistry; Energy Storage; Characterization and Evaluation of Materials; Analytical Chemistry; Condensed Matter Physics
ISSN
1432-8488
eISSN
1433-0768
D.O.I.
10.1007/s10008-017-3514-6
Publisher site
See Article on Publisher Site

Abstract

Aluminum-doped ZnO thin films with pebble-like structures have been successfully deposited on glass substrates by successive ionic layer adsorption reaction method. The effect of percentage composition of the aluminum dopant on the flower-like clusters of the ZnO nanostructures on the structure, morphology, and optical properties was investigated. The ZnO thin films which were crystallized in hexagonal wurtzite structures with crystallite sizes of 44, 51, 56, and 43 nm for the intrinsic and 1, 3, and 5% Al-doped ZnO thin films, respectively. Preferred orientation of crystallites is in all cases in [001] direction perpendicular to the sample surface The Raman spectroscopy revealed decrease in the intensity of the ZnO characteristic peak due to the substitution of the Zn2+ atoms by the Al3+ and attributed to potential fluctuations of the alloy disorder. The introduction of the Al3+ dopant significantly increased the optical band gap.

Journal

Journal of Solid State ElectrochemistrySpringer Journals

Published: Feb 18, 2017

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