Study of the atomically clean InSe(0001) surface by X-ray photoelectron spectroscopy

Study of the atomically clean InSe(0001) surface by X-ray photoelectron spectroscopy The (0001) surface of layered InSe semiconductor crystals is studied experimentally using X-ray photoelectron spectroscopy and theoretically within the context of the method of the electron density functional with periodic boundary conditions. It was found that the structure of the surface layer of atoms and their state has much in common with the corresponding structure and state in the volume. The InSe(0001) surface is resistant to long exposure to air, which makes this material promising for applications as a standard for composition analysis when using electron spectroscopy. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Study of the atomically clean InSe(0001) surface by X-ray photoelectron spectroscopy

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2012 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739712080185
Publisher site
See Article on Publisher Site

Abstract

The (0001) surface of layered InSe semiconductor crystals is studied experimentally using X-ray photoelectron spectroscopy and theoretically within the context of the method of the electron density functional with periodic boundary conditions. It was found that the structure of the surface layer of atoms and their state has much in common with the corresponding structure and state in the volume. The InSe(0001) surface is resistant to long exposure to air, which makes this material promising for applications as a standard for composition analysis when using electron spectroscopy.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 17, 2012

References

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