The results devoted to the development of a method for creating an RF transistor, in which a T-shaped gate is formed by nanoimprint lithography, are presented. The characteristics of GaAs p-HEMT transistors have been studied. The developed transistor has a gate “foot” length of the order of 250 nm and a maximum transconductance of more than 350 mS/mm. The maximum frequency of current amplification f t is 40 GHz at the drain-source voltage V DS = 1.4 V and the maximum frequency of the power gain f max is 50 GHz at V DS = 3 V.
Russian Microelectronics – Springer Journals
Published: Feb 16, 2017
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