Study of plasma radiation spectra of (HCl + Ar, H2, and Cl2) mixtures in GaAs etching

Study of plasma radiation spectra of (HCl + Ar, H2, and Cl2) mixtures in GaAs etching In order to form a topology on a semiconductor surface, a halogen-containing plasma is often used; therefore, the spectral control of the etching process is a topical technology in the modern electronics. In this work we have studied the radiation spectra of plasma-forming gases consisting of mixtures of hydrogen chloride with argon, chlorine, and hydrogen in the presence of a semiconductor plate of gallium arsenide. The lines and bands have been chosen for the spectral control of the rate of the etching process by the radiation intensity of the lines and bands of the etching products. It is shown that a connection between the radiation intensity of the products of GaAs etching and the rate of etching in the plasma of the mixtures of hydrogen chloride with argon and chlorine is described by a directly proportional dependence, which indicates the possibility of real-time control of the etching process by the spectral method. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Study of plasma radiation spectra of (HCl + Ar, H2, and Cl2) mixtures in GaAs etching

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Publisher
Pleiades Publishing
Copyright
Copyright © 2016 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739716050048
Publisher site
See Article on Publisher Site

Abstract

In order to form a topology on a semiconductor surface, a halogen-containing plasma is often used; therefore, the spectral control of the etching process is a topical technology in the modern electronics. In this work we have studied the radiation spectra of plasma-forming gases consisting of mixtures of hydrogen chloride with argon, chlorine, and hydrogen in the presence of a semiconductor plate of gallium arsenide. The lines and bands have been chosen for the spectral control of the rate of the etching process by the radiation intensity of the lines and bands of the etching products. It is shown that a connection between the radiation intensity of the products of GaAs etching and the rate of etching in the plasma of the mixtures of hydrogen chloride with argon and chlorine is described by a directly proportional dependence, which indicates the possibility of real-time control of the etching process by the spectral method.

Journal

Russian MicroelectronicsSpringer Journals

Published: Sep 16, 2016

References

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