A method is proposed for the structural investigation of defect clusters produced by neutron irradiation of semiconductors. It involves simulation of defect formation and analysis of the distribution of point defects within individual clusters. The method enables one to characterize point-defect aggregations in a cluster in terms of size, separation, and arrangement. It could be applied to advanced devices based on a nanoscale heterostructure.
Russian Microelectronics – Springer Journals
Published: Aug 29, 2006
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