Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient

Structural, chemical, and electrical properties of ZrO2/Ge system formed via... The effects of oxidation/nitridation for 15 min at different temperatures (300–800 °C) on metal–oxide–semiconductor characteristics of sputtered Zr thin film based on Ge substrate in N O ambient have been systematically investigated. The crystallinity of the film were evaluated by X-ray diffraction analysis, Raman analysis, and X-ray photoelectron spectrometer. The crystallite size and microstrain of film were estimated by Williamson–Hall plot analysis. Optical microscope was used to examine samples surface condition and high-resolution transmission electron microscopy was carried out to investigate the cross-sectional morphology. GeO was detected in samples with oxidation/nitridation temperature above 700 °C. A possible mechanism of Ge atomic diffusion and its rearrangement in ZrO has been proposed and explicated. 1 Introduction As newer-generation chip dimensions are shrinking, gate oxide thickness is reducing. However, SiO encounters phys- SiO /Si material structure has dominated the semiconductor ical limitation with tunneling effect when thickness is down industries for complementary metal oxide (CMOS) process to 1.2 nm [10]. Therefore, alternative high κ materials were for decades. The reason being SiO has excellent insulat- widely study as SiO replacement, such as HfO , ZrO [11], 2 2 2 2 ing properties and low interface trap level density around Sm O [12], Nd O [13], TiO http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science: Materials in Electronics Springer Journals

Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient

Loading next page...
 
/lp/springer_journal/structural-chemical-and-electrical-properties-of-zro2-ge-system-formed-ik0fnfFm05
Publisher
Springer US
Copyright
Copyright © 2018 by Springer Science+Business Media, LLC, part of Springer Nature
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials
ISSN
0957-4522
eISSN
1573-482X
D.O.I.
10.1007/s10854-018-9408-2
Publisher site
See Article on Publisher Site

Abstract

The effects of oxidation/nitridation for 15 min at different temperatures (300–800 °C) on metal–oxide–semiconductor characteristics of sputtered Zr thin film based on Ge substrate in N O ambient have been systematically investigated. The crystallinity of the film were evaluated by X-ray diffraction analysis, Raman analysis, and X-ray photoelectron spectrometer. The crystallite size and microstrain of film were estimated by Williamson–Hall plot analysis. Optical microscope was used to examine samples surface condition and high-resolution transmission electron microscopy was carried out to investigate the cross-sectional morphology. GeO was detected in samples with oxidation/nitridation temperature above 700 °C. A possible mechanism of Ge atomic diffusion and its rearrangement in ZrO has been proposed and explicated. 1 Introduction As newer-generation chip dimensions are shrinking, gate oxide thickness is reducing. However, SiO encounters phys- SiO /Si material structure has dominated the semiconductor ical limitation with tunneling effect when thickness is down industries for complementary metal oxide (CMOS) process to 1.2 nm [10]. Therefore, alternative high κ materials were for decades. The reason being SiO has excellent insulat- widely study as SiO replacement, such as HfO , ZrO [11], 2 2 2 2 ing properties and low interface trap level density around Sm O [12], Nd O [13], TiO

Journal

Journal of Materials Science: Materials in ElectronicsSpringer Journals

Published: Jun 5, 2018

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Search

Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly

Organize

Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.

Access

Get unlimited, online access to over 18 million full-text articles from more than 15,000 scientific journals.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve

Freelancer

DeepDyve

Pro

Price

FREE

$49/month
$360/year

Save searches from
Google Scholar,
PubMed

Create lists to
organize your research

Export lists, citations

Read DeepDyve articles

Abstract access only

Unlimited access to over
18 million full-text articles

Print

20 pages / month

PDF Discount

20% off