Analytic expressions for a nonuniform electric field in the space-charge region of a planar, cylindrical, and spherical semiconducting electroluminescent structure were derived. It is shown that dc voltages at which near-breakdown avalanche electroluminescence occurs substantially decrease if the space charge is positive and the cathodes are nonplanar. The breakdown voltage of the structures depend on the semiconducting layer thickness. Operating voltages were found to vary in a wide range. In structures with a nonuniformly distributed electric field, the emission brightness can smoothly be varied.
Russian Microelectronics – Springer Journals
Published: Dec 4, 2007
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