Specific features of radiation-stimulated breakdown of a nonuniformly doped p-n junction

Specific features of radiation-stimulated breakdown of a nonuniformly doped p-n junction A quasi-hydrodynamic model of the transport of charge carriers under the ionizing effect of quantum radiation with the allowance made for the dynamics of heating of the semiconductor crystal by the flowing current is developed. Simulation of thermal breakdown of a nonuniformly doped p-n junction caused by a single radiation pulse is investigated. The variation in the times of relaxation of energy and pulse of electrons and suppression of the mechanism of impact ionization under the dynamic increase in the temperature of the semiconductor crystal is taken into account. The adequacy of the results of calculations is proved by comparing them with experimental data. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Specific features of radiation-stimulated breakdown of a nonuniformly doped p-n junction

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Publisher
Springer Journals
Copyright
Copyright © 2009 by MAIK Nauka
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739709010077
Publisher site
See Article on Publisher Site

Abstract

A quasi-hydrodynamic model of the transport of charge carriers under the ionizing effect of quantum radiation with the allowance made for the dynamics of heating of the semiconductor crystal by the flowing current is developed. Simulation of thermal breakdown of a nonuniformly doped p-n junction caused by a single radiation pulse is investigated. The variation in the times of relaxation of energy and pulse of electrons and suppression of the mechanism of impact ionization under the dynamic increase in the temperature of the semiconductor crystal is taken into account. The adequacy of the results of calculations is proved by comparing them with experimental data.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jan 8, 2009

References

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