The constructional features of the design of individual units and their mutual arrangement in static CMOS memory devices are reviewed. These features have a consolidated effect upon the functionality, operating speed, and reliability of memory devices over a wide region of specified technological parameters of the manufacturing process. The principles of the architecture of static CMOS memory devices and the related problems of designing the circuits for the formation of a sequence of control signals by individual units are discussed.
Russian Microelectronics – Springer Journals
Published: Jul 21, 2010
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