Special Issue on Radiation Hardness Assurance in Microelectronics

Special Issue on Radiation Hardness Assurance in Microelectronics Russian Microelectronics, Vol. 33, No. 2, 2004, p. 63. Translated from Mikroelektronika, Vol. 33, No. 2, 2004, pp. 83–84. Original Russian Text Copyright © 2004 by the Editorial Board. Special Issue on Radiation Hardness Assurance in Microelectronics Radiation-hardened microelectronics has experi- wealth of information thus gained makes predictions enced a dramatic growth in the amount of radiation test- far more reliable. ing required. This stems from the need for the hardness At the same time, consideration should be given to assurance of all designs, the diversity of operating con- the special features of the IC under test and to its pur- ditions to be covered by tests, the need for evaluating pose. The tendency toward new designs and applica- radiation tolerance during manufacture, and heavy tions necessitates an increasingly deep understanding demands placed on the reliability of test results. of radiation-induced processes in ICs. A traditional approach to the hardness-assurance This special issue addresses the modeling and simu- testing of integrated circuits (ICs) relies on particle lation of ionizing radiation effects in ICs and their ele- accelerators and nuclear reactors. Its main disadvan- ments. Emphasis is placed on radiation-response mech- tages are the complexity, high cost, and low perfor- anisms, the equivalence of models to actual radiations, mance of test facilities. Moreover, such tests do not and practical approaches to hardening. The papers pre- allow one to predict radiation response in certain radia- sented reflect current trends in the field. tion environments and modes of operation unless spe- cial assumptions are made. Professor Tatevos Mamikonovich Agakhanyan, a The above problems have stimulated the develop- long-time editor of Mikroelektronika, was the moving ment of physical and numerical simulation in which the spirit behind this publication. It might be seen as a tes- radiation of interest is replaced with another one that is timony to his accomplishments in radiation-hardened equivalent in terms of major effects on the IC. The new electronics since the mid-1970s, when he started a spe- approach depends on the understanding of the physics cial research group at the Moscow Institute of Engi- that governs the radiation response. neering Physics (Technical University). This activity continues to yield important results and to influence Novel radiation simulators use efficient and inex- pensive tools such as x-ray, laser, fission, etc., sources. related work at other institutions. They are readily integrated with process and checkout equipment and are fully compatible with computer- controlled instrumentation of any complexity. The Editorial Board 1063-7397/04/3302-0063 © 2004 MAIK “Nauka / Interperiodica” http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Special Issue on Radiation Hardness Assurance in Microelectronics

Russian Microelectronics , Volume 33 (2) – Oct 18, 2004
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Kluwer Academic Publishers-Plenum Publishers
Copyright © 2004 by MAIK “Nauka/Interperiodica”
Engineering; Electrical Engineering
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