The thermal oxidation of GaAs covered with an Ni layer is studied experimentally. It is shown that this layer makes for better dielectric performance of the oxide film and inhibits the escape of the volatiles from GaAs. A possible pattern of the oxidation of Ni/GaAs heterostructures is put forward. It includes the formation of a transition layer between NiO and GaAs, which contains nickel–arsenic and nickel–gallium compounds. Reactions at the interface between the transition layer and NiO are considered.
Russian Microelectronics – Springer Journals
Published: Oct 13, 2004
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