Solar Cells Fabricated in Upgraded Metallurgical Silicon, Obtained Through Vacuum Degassing and Czochralski Growth

Solar Cells Fabricated in Upgraded Metallurgical Silicon, Obtained Through Vacuum Degassing and... Upgraded metallurgical grade silicon (UMG-Si) was obtained through metallurgical methods using two steps. First, metallurgical grade silicon was purified by the vacuum degassing technique using an electron-beam system. An ingot was then produced through Czochralski (CZ) growth. This later process was also used to reduce impurities through the segregation phenomenon in the CZ technique, producing a material of 99.9993% purity, one order of magnitude less pure than the minimum required for solar grade silicon. Solar cells fabricated with polycrystalline silicon with that amount of impurities are of low efficiency. Thus, the CZ technique was also adopted to supply monocrystalline silicon in order to avoid additional defects due to the grain boundary of polycrystalline wafers. Adopting this procedure, we produced solar cells with an efficiency of 13%, using a very simple fabrication process. Keywords Czochralski growth · Upgraded metallurgical grade silicon · Solar cells · Vacuum degassing 1 Introduction Here we present a procedure to purify metallurgical grade silicon by adopting two steps. First, metallurgical grade Currently, commercial photovoltaic (PV) modules are silicon was purified by vacuum degassing (VD) using an fabricated mainly using monocrystalline or polycrystalline electron-beam system. The total impurity obtained by this process is relatively high, such http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Silicon Springer Journals

Solar Cells Fabricated in Upgraded Metallurgical Silicon, Obtained Through Vacuum Degassing and Czochralski Growth

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Publisher
Springer Journals
Copyright
Copyright © 2018 by Springer Science+Business Media B.V., part of Springer Nature
Subject
Chemistry; Inorganic Chemistry; Materials Science, general; Optics, Lasers, Photonics, Optical Devices; Environmental Chemistry; Polymer Sciences
ISSN
1876-990X
eISSN
1876-9918
D.O.I.
10.1007/s12633-018-9860-x
Publisher site
See Article on Publisher Site

Abstract

Upgraded metallurgical grade silicon (UMG-Si) was obtained through metallurgical methods using two steps. First, metallurgical grade silicon was purified by the vacuum degassing technique using an electron-beam system. An ingot was then produced through Czochralski (CZ) growth. This later process was also used to reduce impurities through the segregation phenomenon in the CZ technique, producing a material of 99.9993% purity, one order of magnitude less pure than the minimum required for solar grade silicon. Solar cells fabricated with polycrystalline silicon with that amount of impurities are of low efficiency. Thus, the CZ technique was also adopted to supply monocrystalline silicon in order to avoid additional defects due to the grain boundary of polycrystalline wafers. Adopting this procedure, we produced solar cells with an efficiency of 13%, using a very simple fabrication process. Keywords Czochralski growth · Upgraded metallurgical grade silicon · Solar cells · Vacuum degassing 1 Introduction Here we present a procedure to purify metallurgical grade silicon by adopting two steps. First, metallurgical grade Currently, commercial photovoltaic (PV) modules are silicon was purified by vacuum degassing (VD) using an fabricated mainly using monocrystalline or polycrystalline electron-beam system. The total impurity obtained by this process is relatively high, such

Journal

SiliconSpringer Journals

Published: May 30, 2018

References

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