SOI-MOSFET Threshold-Voltage Characteristics

SOI-MOSFET Threshold-Voltage Characteristics The behavior of threshold voltage in a dual-gate SOI MOSFET is investigated theoretically. To this end, a boundary-value problem for Poisson's equation is solved numerically in the active silicon region. The major issue is the adjustment of front-gate threshold voltage by varying back-gate bias. This dependence is analyzed in the cases of back-surface accumulation, back-surface inversion, and full depletion. It is noted that the relation between the threshold voltage and the back-gate bias has nonlinear character due to the exponential growth in space charge as a function of surface potential under strong accumulation or inversion. It is established that the threshold-voltage adjustment is possible owing to charge coupling between the gates via the active region. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

SOI-MOSFET Threshold-Voltage Characteristics

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2003 by MAIK Nauka/Interperiodica
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1021803601001
Publisher site
See Article on Publisher Site

Abstract

The behavior of threshold voltage in a dual-gate SOI MOSFET is investigated theoretically. To this end, a boundary-value problem for Poisson's equation is solved numerically in the active silicon region. The major issue is the adjustment of front-gate threshold voltage by varying back-gate bias. This dependence is analyzed in the cases of back-surface accumulation, back-surface inversion, and full depletion. It is noted that the relation between the threshold voltage and the back-gate bias has nonlinear character due to the exponential growth in space charge as a function of surface potential under strong accumulation or inversion. It is established that the threshold-voltage adjustment is possible owing to charge coupling between the gates via the active region.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 11, 2004

References

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