SOI-MOSFET Threshold-Voltage Characteristics

SOI-MOSFET Threshold-Voltage Characteristics The behavior of threshold voltage in a dual-gate SOI MOSFET is investigated theoretically. To this end, a boundary-value problem for Poisson's equation is solved numerically in the active silicon region. The major issue is the adjustment of front-gate threshold voltage by varying back-gate bias. This dependence is analyzed in the cases of back-surface accumulation, back-surface inversion, and full depletion. It is noted that the relation between the threshold voltage and the back-gate bias has nonlinear character due to the exponential growth in space charge as a function of surface potential under strong accumulation or inversion. It is established that the threshold-voltage adjustment is possible owing to charge coupling between the gates via the active region. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

SOI-MOSFET Threshold-Voltage Characteristics

Loading next page...
 
/lp/springer_journal/soi-mosfet-threshold-voltage-characteristics-dN67h00zMv
Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2003 by MAIK Nauka/Interperiodica
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1021803601001
Publisher site
See Article on Publisher Site

Abstract

The behavior of threshold voltage in a dual-gate SOI MOSFET is investigated theoretically. To this end, a boundary-value problem for Poisson's equation is solved numerically in the active silicon region. The major issue is the adjustment of front-gate threshold voltage by varying back-gate bias. This dependence is analyzed in the cases of back-surface accumulation, back-surface inversion, and full depletion. It is noted that the relation between the threshold voltage and the back-gate bias has nonlinear character due to the exponential growth in space charge as a function of surface potential under strong accumulation or inversion. It is established that the threshold-voltage adjustment is possible owing to charge coupling between the gates via the active region.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 11, 2004

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 12 million articles from more than
10,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Unlimited reading

Read as many articles as you need. Full articles with original layout, charts and figures. Read online, from anywhere.

Stay up to date

Keep up with your field with Personalized Recommendations and Follow Journals to get automatic updates.

Organize your research

It’s easy to organize your research with our built-in tools.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve Freelancer

DeepDyve Pro

Price
FREE
$49/month

$360/year
Save searches from Google Scholar, PubMed
Create lists to organize your research
Export lists, citations
Read DeepDyve articles
Abstract access only
Unlimited access to over
18 million full-text articles
Print
20 pages/month
PDF Discount
20% off