SiO2 films were deposited in an rf inductive discharge plasma (13.56 MHz) at a substrate temperature of-550 K and an ion energy of 35 eV. Variable parameters were silane and oxygen flow rates, pressure (0.3–1.2 Pa), and ion current density (1–2.5 mA/cm2). In these ranges of the process parameters, good silicon dioxide films with a composition close to that of thermally oxidized SiO2 were obtained. The film growth rate was found to be 65 nm/min. The deposition nonuniformity was <4% over 100-mm silicon wafers.
Russian Microelectronics – Springer Journals
Published: Dec 4, 2007
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