SiO2 film deposition in a low-pressure RF inductive discharge SiH4 + O2 plasma

SiO2 film deposition in a low-pressure RF inductive discharge SiH4 + O2 plasma SiO2 films were deposited in an rf inductive discharge plasma (13.56 MHz) at a substrate temperature of-550 K and an ion energy of 35 eV. Variable parameters were silane and oxygen flow rates, pressure (0.3–1.2 Pa), and ion current density (1–2.5 mA/cm2). In these ranges of the process parameters, good silicon dioxide films with a composition close to that of thermally oxidized SiO2 were obtained. The film growth rate was found to be 65 nm/min. The deposition nonuniformity was <4% over 100-mm silicon wafers. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

SiO2 film deposition in a low-pressure RF inductive discharge SiH4 + O2 plasma

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Publisher
Nauka/Interperiodica
Copyright
Copyright © 2000 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electronic and Computer Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1007/BF02773255
Publisher site
See Article on Publisher Site

Abstract

SiO2 films were deposited in an rf inductive discharge plasma (13.56 MHz) at a substrate temperature of-550 K and an ion energy of 35 eV. Variable parameters were silane and oxygen flow rates, pressure (0.3–1.2 Pa), and ion current density (1–2.5 mA/cm2). In these ranges of the process parameters, good silicon dioxide films with a composition close to that of thermally oxidized SiO2 were obtained. The film growth rate was found to be 65 nm/min. The deposition nonuniformity was <4% over 100-mm silicon wafers.

Journal

Russian MicroelectronicsSpringer Journals

Published: Dec 4, 2007

References

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