A computer simulation is run to estimate the single-event-upset susceptibility of dual-path inverters implemented in 0.18-μm CMOS technology, which are known to tolerate much higher photocurrent pulses as compared with conventional designs. Relations are established between the peak photocurrent and total collected charge associated with a single nuclear particle on the one hand and the peak voltage response on the other. In the first of two identical inverters connected in cascade, the peak photocurrent is found to be 1.1 to 2.2-fold higher than the output current at the instant of extreme output voltage, with the coefficient depending on the transistor parameters of the inverter. The critical charge to upset is found to be 10 to 15-fold higher than for conventional designs.
Russian Microelectronics – Springer Journals
Published: Mar 28, 2012
It’s your single place to instantly
discover and read the research
that matters to you.
Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.
All for just $49/month
Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly
Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.
All the latest content is available, no embargo periods.
“Whoa! It’s like Spotify but for academic articles.”@Phil_Robichaud