Single-event-effect sensetivity characterization of LSI circuits with a laser-based and a pulsed gamma-ray testing facilities used in combination

Single-event-effect sensetivity characterization of LSI circuits with a laser-based and a pulsed... Evaluation formulas are presented for equivalent heavy-ion linear energy transfer in the context of LSI-circuit sensetivity to single-event effects, based on local laser test data. The method suggested is validated for calculating the linear energy transfer from laser-pulse energy on the basis of radiation-response measurements on pulsed gamma-ray test sets. The method is free from errors related to the uncertainty in electrical properties of semiconductor structures. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Single-event-effect sensetivity characterization of LSI circuits with a laser-based and a pulsed gamma-ray testing facilities used in combination

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2012 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739712040051
Publisher site
See Article on Publisher Site

Abstract

Evaluation formulas are presented for equivalent heavy-ion linear energy transfer in the context of LSI-circuit sensetivity to single-event effects, based on local laser test data. The method suggested is validated for calculating the linear energy transfer from laser-pulse energy on the basis of radiation-response measurements on pulsed gamma-ray test sets. The method is free from errors related to the uncertainty in electrical properties of semiconductor structures.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jul 12, 2012

References

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