SCIENTIFIC RESEARCH AND DEVELOPMENT
SINGLE CRYSTALS AND LIGHT-TRANSMITTING BeO-CERAMIC
FOR ELECTRONIC TECHNOLOGY
Yu. N. Makurin,
V. S. Kiiko,
I. R. Shein,
V. A. Maslov,
and A. L. Ivanovskii
Translated from Novye Ogneupory, No. 5, pp. 21 – 25, May 2010.
Original article submitted March 19, 2010.
Problems are discussed for the preparation and physicochemical properties of beryllium oxide and light-trans
mitting BeO-ceramic as promising materials for electronic technology.
Keywords: beryllium oxide, single crystals, BeO-ceramic, synthesis, properties, application.
Ceramics and single crystals of beryllium oxide (BeO)
are distinguished from other alkali-earth metal oxides by
high refractoriness and melting temperature (~2750 K)
[1, 2], and they are considered  as promising materials for
quantum electronics. It is well known that BeO is a good di-
electric material with a broad forbidden zone (~10.8 eV), it
exhibits high chemical, radiation resistance, and thermal
conductivity, that for ceramic BeO specimens is (at room
temperature) 250 – 320 W/(m·K) [2, 4]; for BeO single crys-
tals compared with ceramic based on BeO the thermal con-
ductivity is somewhat higher.
Currently powerful laser radiation in the ultraviolet (UV)
and vacuum ultraviolet (VUV) regions of the spectrum is
practically realized by means of gas lasers in gases of hydro
gen, fluorine, nitrogen, in excimers, and exiplex mixtures
. Up until now no quantum generators have been created
in the UV and VUV regions of the spectrum based on broad
zone high-temperature oxides Al
, MgO and BeO.
Beryllium oxide is of considerable interest as a working
body for quantum electronic instruments, and also
reradiators and optical systems of the UV and VUV ranges of
the spectrum [2, 3]. Currently powerful coherent radiation in
the UV and VUV regions of the spectrum may find practical
application in the production of electronic instruments as ra
diation sources and excitation in photolithography, photolu
minescence, photochemistry, biology, in space studies and
With use of beryllium oxide single crystals and light-
transmitting BeO-ceramic as active media for lasers it is nec-
essary to obtain high purity crystals, in order that during radi-
ation there are no discoloration centers and the crystals ex-
hibit photochemical stability. For BeO there is a typical mini-
mum number of crystal lattice defects. In addition, BeO ex-
hibits low isomorphous compatibility (at the level of
wt.%), that makes stepwise ionization of active
impurity centers hardly probable. It is well known that
BeO-ceramic during excitation with X-radiation and elec
trons exhibits two peak luminescence peaks in the UV and
VUV regions of the spectrum with maxima of 4.9 – 5.0 and
6.7 eV , excited the edge of fundamental absorption. All
of this makes it possible to consider BeO promising as a ma
terial for solid lasers of the UV and VUV regions of the spec
trum. In view of this development of technology for prepar
ing optically improved single crystals and ceramics based on
BeO with special physicochemical properties, making it pos
sible to provide the required spectral-energy and spatial char
acteristics, is of particular interest.
In this work problems are discussed of preparing and the
physicochemical properties of beryllium oxide single crys
tals and light-transmitting BeO-ceramic as promising materi
als for electronic technology. Creation of solid active materi
als based on single crystals and optically transparent ceramic
are limited both by the difficulties in growing crystals (slow
growth rates), and in the low optical quality of the crystals
and ceramics obtained. It is necessary to prepare single crys
tals, to study their defects carefully at the macrolevel, and to
compare the physicochemical properties of single crystals
Refractories and Industrial Ceramics Vol. 51, No. 3, 2010
1083-4877/10/5103-0167 © 2010 Springer Science+Business Media, Inc.
GOUVPO Ural State Technological University – Ural Pedagogi
cal Institute, Ekaterinburg, Russia
Institute of Solid Chemistry UrO RAN, Ekaterinburg, Russia.
Branch of the Institute of Solid Chemistry UrO RAN, Tarusa,
Kaluga Region, Russia.